收藏本站
DMG3420U
20
V GS = 10V
20
V DS = 5V
15
10
V GS = 4.5V
V GS = 3.5V
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
15
10
5
V GS = 1.8V
5
T A = 150°C
T A = 125°C
V GS = 1.5V
T A = 85°C
T A = 25°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0
0
T A = -55°C
1 2 3
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
4
0.08
0.06
0.08
0.06
V GS = 4.5V
0.04
V GS = 2.5V
0.04
T A = 150°C
T A = 125°C
T A = 85°C
0.02
V GS = 4.5V
0.02
T A = 25°C
T A = -55°C
0
0
5 10 15
I D , DRAIN-SOURCE CURRENT (A)
20
0
0
5 10 15 20
I D , DRAIN CURRENT (A)
1.7
1.5
1.3
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.06
0.05
0.04
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.1
0.9
V GS = 4.5V
I D = 10A
0.03
0.02
V GS = 2.5V
I D = 5A
V GS = 4.5V
I D = 10A
0.7
V GS = 2.5V
I D = 5A
0.01
0.5
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
T J , JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG3420U
Document number: DS31867 Rev. 5 - 2
3 of 6
www.diodes.com
September 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMG4406LSS-13 MOSFET N CH 30V 10.3A SO-8
DMG4413LSS-13 MOSFET P-CH 30V 10.5A SOP8L
DMG4435SSS-13 MOSFET P-CH 30V 7.3A 8SOIC
DMG4466SSS-13 MOSFET N-CH 30V 10A SO8
DMG4466SSSL-13 MOSFET N-CH 30V 10A SO8
DMG4468LFG MOSFET N-CH 30V 7.62A 8DFN
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252
DMG4496SSS-13 MOSFET N-CH 30V 10A SO8
相关代理商/技术参数
DMG3420UQ-7 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance
DMG-400 制造商:Pro-Signal 功能描述:GOOSENECK MIC BARE ENDS 制造商:PRO SIGNAL 功能描述:GOOSENECK MIC, BARE ENDS 制造商:pro-power 功能描述:GOOSENECK MIC, BARE ENDS; Output Impedance:500ohm; Frequency Response Min:200Hz; Frequency Response Max:12kHz; Sensitivity:2.2mV/Pa/1kHz; Connector Type:3 Bare Wire Ends; Device Type:Gooseneck Microphone; External Diameter:28mm;
DMG4406LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMG4406LSS-13 功能描述:MOSFET N-Ch ENH 30V 11mOhm 10.3A 10V VGS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4407SSS-13 功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4413LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMG4413LSS-13 功能描述:MOSFET MOSFET,N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMG4435SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET